 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.02.01 Revised Date : 1999.08.01 Page No. : 1/5 HSK1118 Description * Field Effect Transistor. * Silicon N Channel MOS Type. * High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features * 4-Volt Gate Drive * Low Drain-Source On Resistanc - RDS(on)=0.95 (Typ.) * High Forward Transfer Admittance - | Yfs |=4.0S (Typ.) * Low Leakage Current - IDSS = 300uA (Max.) @VDS = 600V * Enhancement-Mode - Vth = 1.5~3.5V @VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta=25C) * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ...................................................................................................... 150 C * Maximum Power Dissipation Total Power Dissipation (Tc=25C) .................................................................................... 45 W * Maximum Voltages and Currents (Tc=25C) DRAIN to SOURCE Breakdown Voltage .......................................................................... 600 V DRAIN to GATE Breakdown Voltage ................................................................................ 600 V GATE to SOURCE Voltage ............................................................................................... 30 V DRAIN Current (Cont.).......................................................................................................... 6 A DRAIN Current (Pluse) ....................................................................................................... 24 A Thermal Characteristics Characteristic Junction to Case Junction to Ambient Symbol RJC RJA Max. 2.77 62.5 Units C/W C/W Note : This transistor is an electrostatic sensitive device. Please handle with care. HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics (Ta=25C) Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source On Voltage On-State Drain Current Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Symbol V(BR)DSS VGS(th) IDSS IGSS VDS(ON) ID(ON) RDS(ON) Ciss Crss Coss Tr Switching Time Ton Tf Toff Total Gate Charge (Gate-Source Plus Gate-Drain) Gate-Source Charge Gate-Drain Charge (Miller) Qg Qgs Qgd Min. Typ. Max. Unit 600 2 9 4 25 100 6 V V uA nA V A pF pF pF Spec. No. : Preliminary Data Issued Date : 1998.02.01 Revised Date : 1999.08.01 Page No. : 2/5 Test Conditions ID=250uA VDS=10V, ID=1mA VDS=600V VGS=25V ID=5.0A, VG=10V VDS=10V, VGS=10V VGS=10V, ID=3A VDS=10V ,VGS=0V f =1MHz 0.95 1.25 2000 500 740 50 80 40 170 60 30 30 - nS VIN : Tr, Tf<5nS VDD=300V, ID=3A VGS=10V Duty1%, tw=10uS ID=6A VDS=400V VGS=10V nC nC nC Characteristics Curve On-Region Characteristic 5 VGS=10V 6V 5.5V 5V 8 10 10V VGS=6V 5.5V On-Region Characteristic ID Drain-Source Current (A) 3 ID Drain-Source Current (A) 4 6 5V 4 2 4.5V 1 4V 2 4.5V 4V 0 0 2 4 6 8 10 0 0 20 40 60 80 100 VDS , Drain-Source Voltage (V) VDS ,Drain-Source Voltage (V) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.02.01 Revised Date : 1999.08.01 Page No. : 3/5 Drain Current Variation & Gate Voltage & Temperature 6 VDS=10V 5 Tc=100C Transconductance Variation & Drain Current & Temperature 10 VDS=10V 9 Tc=25C ID Drain-Source Current (A) gFS,Transconductance (S) Tc=25C 4 8 7 6 5 4 3 2 1 Tc=100C 3 2 1 0 0 1 2 3 4 5 6 7 8 0 0 2 4 6 8 VGS, Gate-Source Voltage (V) ID, Drain Current (A) On Resistance Variation & Temperature 4.0 VGS=10V Capacitance Characteristics 10000 RDS(ON) Normalized Drain-Source OnResistance 3.5 Ciss 3.0 2.5 2.0 ID=3A 1.5 1.0 0.5 0.0 20 40 60 80 100 120 140 ID=6A ID=1A 1000 Capacitance (pF) Coss 100 Crss 10 1 1 10 100 Tc, Case Temperature (C) VDS, Drain-Source Voltage (V) Typical On-Resistance & Drain Current 2.4 2.4 Typical On-Resistance & Drain Current RDS(ON) Drain-Source On-Resistance RDS(ON) Drain-Source On-Resistance VGS=10V 2.0 Tc=100C 1.6 2.0 1.6 1.2 Tc=25C 0.8 1.2 VGS=10V 0.8 VGS=15V 0.4 0.4 0.0 0 2 4 6 8 10 0.0 0 2 4 6 8 10 ID, Drain Current (A) ID, Drain Current (A) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.02.01 Revised Date : 1999.08.01 Page No. : 4/5 Breakdown Voltage Variation & Temperature 1.20 10 Body Diode Forward Voltage Variation & Current & Temperature Tc=100C BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 IS ,Reverse Drain Current (A) Tc=25C 8 1.10 6 1.05 4 1.00 2 0.95 25 50 75 100 125 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Tc, Case Temperature (C) VSD, Body Diode Forward Voltage (V) Maximum Safe Operating Area (TO-220 FP) 100.00 VGS=10V Si ngle Pulse Tc=25C 16 14 Dynamic Input /Output Characteristics ID=6A Tc=25C 10.00 Gate-Source Voltage VGS (V) ID ,Drain-Source Current (A) 100us 12 VDD=240V 10 VDD=120V 8 6 4 2 VDD=400V RDS(on) Line 1ms 10ms 100ms 1.00 0.10 Dc 0.01 0.1 1 10 100 1000 10000 0 0 10 20 30 40 50 60 70 VDS ,Drain-Source Voltage (V) Total Gate Charge Qg (nC) Transient Thermal Response Curve(TO-220FP) 1.00 r(t) Normalized Effective Transient Thermal Resistance 0.5 0.2 0.1 0.10 0.05 RJC(t) = r(t) * RJC(t) RJC =2.46 C / W P(pk) t1 0.02 t2 0.01 Single Pulse 0.01 0.1 1 10 100 TJ-TC=P*RJC(t) Duty Cycle, D=t1/t2 1000 t 1 ,Time(ms) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking : A D B E C HSMC Logo Part Number Date Code Spec. No. : Preliminary Data Issued Date : 1998.02.01 Revised Date : 1999.08.01 Page No. : 5/5 Product Series Rank H I G 4 P M 3 2 1 N K Style : Pin 1.Gate 2.Drain 3.Source O 3-Lead TO-220AB Plastic Package HSMC Package Code : E *:Typical DIM A B C D E G H Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 - Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 - DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes : 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 * Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification |
Price & Availability of HSK1118
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |